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| UNISONIC TECHNOLOGIES CO., LTD UF450 12 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UF450 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. Power MOSFET 1 TO-247 FEATURES * RDS(ON) = 0.4@VGS = 10V * Ultra low gate charge (max. 120nC ) * Low reverse transfer capacitance ( CRSS = typical 240pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability *Pb-free plating product number: UF450L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating UF450-T47-T UF450L-T47-T Package TO-247 Pin Assignment 1 2 3 G D S Packing Tube www.unisonic.com.tw Copyright (c) 2008 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-185.A UF450 ABSOLUTE MAXIMUM RATINGS PARAMETER Gate-to-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Avalanche Current Single Pulse Avalanche Energy (Note 2) Power Dissipation TC=25 ) Power MOSFET SYMBOL RATINGS UNIT VGSS 20 V ID 12 A IDM 48 A IAR 12 A EAS 8.0 mJ 190 W PD Peak Diode Recovery dv/dt (Note 2) dv/dt 3.5 V/ns Junction Temperature TJ +150 Strong Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA Junction-to- Ambient Junction-to-Case SYMBOL MIN TYP JA jC ELECTRICAL CHARACTERISTICS (TJ =25 , unless otherwise specified) PARAMETER MAX 30 0.83 UNIT /W /W UNIT V A nA V/ V m PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0 V, ID =1.0 mA 500 Drain-Source Leakage Current IDSS VDS=400V,VGS =0 V 25 Gate-Source Leakage Current IGSS VDS =0 V, VGS = 20V 100 Breakdown Voltage Temperature Coefficient BVDSS/TJ Reference to 25 , ID=1.0mA 0.78 ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID =250 A 2.0 4.0 VGS =10V, ID =7.75A 400 Static Drain-Source On-State Resistance RDS(ON) VGS =10V, ID =12A 500 DYNAMIC PARAMETERS Input Capacitance CISS 2700 VDS= 25V, VGS =0V, Output Capacitance COSS 600 f=1.0MHz 240 Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG 55 120 VDS =250V, VGS =10V, Gate Source Charge QGS 5.0 19 ID =12A 27 70 Gate Drain Charge QGD Turn-ON Delay Time tD(ON) 35 VDD=250V, ID =12A, Turn-ON Rise Time tR 190 RG =2.35 Turn-OFF Delay Time tD(OFF) 170 Turn-OFF Fall-Time tF 130 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS IS=12A,VGS=0V, TJ =25 1.7 Drain-Source Diode Forward Voltage VSD Maximum Continuous Drain-Source Diode IS 12 Forward Current Maximum Pulsed Drain-Source Diode ISM 48 Forward Current IF=12 A, dI/dt100A/s, Reverse Recovery Time tRR 1600 TJ =25 ,VDD50V (Note3) Reverse Recovery Charge QRR 14 Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. VDD = 50V, starting TJ = 25 , Peak IL = 12A, ISD 12, di/dt 130A/s,VDD 500V, TJ150 Suggested RG =2.35 3. Pulse Test: Pulse width 300s, Duty cycle 2% 4. Essentially independent of operating temperature pF nC ns V A ns c UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-185.A UF450 TEST CIRCUITS AND WAVEFORMS Switching Time Test Circuit VGS VDS RD Power MOSFET Switching Time Waveforms VDS 90 RG VGS=10V DUT + V - DD 10 VGS Pulse Width1s Duty Cycle0.1 td(on) tr td(off) tf Unclamped Inductive Test Circuit VGS VDS L 15V Driver RG Unclamped Inductive Waveforms V(BR)DSS tP DUT VDD + 0.01 VGS =10V 0V IAS tP IAS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-185.A UF450 TYPICAL CHARACTERISTICS Typical Output Characteristics 4.5,5.0,5.5,6.0,7.0,8.0,10,15V Drain Current,ID (A) Power MOSFET Typical Output Characteristics 4.5,5.0,5.5,6.0,7.0,8.0,10,15V Drain Current,ID (A) 101 101 4.5V 4.5V 100 100 20 s Pulse Width TC=25 101 Drain to Source Voltage,VDS (V) 100 20 s Pulse Width TC=150 100 101 Drain to Source Voltage,VDS (V) Typical Transfer Characteristics Normalized Drain to Source OnResistance,RDS(ON) 10 Single Pulse Energy,EAS (mJ) Normalized On-Resistance vs. Temperature 3.0 ID=12A 2.5 2.0 1.5 1.0 0.5 VGS=10V 0.0 -50 -40 -20 0 20 40 60 80 100 120140 160 Junction Temperature,TJ ( ) Drain Current,ID (A) 150 101 25 100 VDS=50V s Pulse Width 20 4 5 7 8 9 6 Gate to Source Voltage,VGS (V) Drain Current,ID (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-185.A UF450 TYPICAL CHARACTERISTICS(Cont.) Power MOSFET Gate to Source Voltage,VGS (V) Body-Diode Characteristics 150 Drain Current,ID (A) 10 1 Capacitance (pF) 103 Maximum Safe Operating Area Reverse Drain Current,IS (A) 102 RDS(ON) Limited 10 s s 25 10 100 10 0 1ms 1 10ms TC=25 TJ=150 Single Pulse 1 102 10 Drain to Source Voltage,VDS (V) 103 10-1 0.4 VGS=0V 0.6 0.8 1.0 1.2 Body Diode Forward Voltage,VSD (V) 0.1 10 Maximum Effective Transient Thermal Impedance,Junction-to-Case In descending order D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse Thermal Response, ZthJC 1 0.1 PDM t 1 t 2 10 -2 1.Duty Factor,D=t1/t2 2.Peak TJ=PDM.ZthJC+TC 10-3 10-5 10-4 10-3 10-2 0.1 Rectangular Pulse Duration,t1 (s) 1 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-185.A UF450 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-185.A |
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